M. A. Magdy, R. A. A, " The Electronic Structure Of Modulation Doped InGaAs/n-InAlAs Heterostructures " , "IL Nouvo Cemento",Vol.17 D N. 4,No., , Italy, 04/16/1995
Abstract:
The energy subband structure of modulation-doped InGaAs/n-InAlAs heterostructures is calculated in a variational self-consistent manner. The dependence on variuos device parameters are examined. The many body exhange-correlation are taken into account.
R. A. Alkhader and M, " Optical Absorption in Modulation Doped In0.53Al0.47As/n-In 0.52Al0.48As Heterostructure " , "Turkish Journal of Physics",Vol.19,No., , Turkey, 04/30/1995
Abstract:
The intersubband optical absorption coefficient has been calculated for the modulation doped InGaAs/n-InAlAs heterostructure, where the three lowest subbands are occupied. The calculated line shapes are similar to those in modulation doped quantum wells.
Dr. Rafiq Abdulla Al, " The Electronic Structure and Optical Absorption in Modulation Doped Semiconductor Heterostructures " , "",Vol.,No., , Turkey, 06/20/1994
Rafiq Alkhader, " Thermal Expansion of Low Cordierite " , "",Vol.,No., , Turkey, 06/08/1988
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